Haptic display device

ABSTRACT

A haptic display device is disclosed. In one aspect, the device includes a plurality of scan lines disposed over a substrate and configured to transfer a scan signal and a plurality of data lines electrically insulated from the scan lines and configured to transfer a data signal, wherein the data lines cross the scan lines. The device also includes a plurality of haptic control lines electrically insulated from the scan lines or the data lines and configured to transfer a haptic signal and a thin film transistor electrically connected to the scan lines and the data lines, wherein the thin film transistor is formed in each of a plurality of pixels. The device further includes a first electrode electrically connected to the thin film transistor, a second electrode facing the first electrode and an optical adjustment member disposed between the first and second electrodes.

CROSS-REFERENCE TO RELATED APPLICATIONS

Any and all priority claims identified in the Application Data Sheet, orany correction thereto, are hereby incorporated by reference under 37CFR 1.57. For example, this application is a continuation of U.S. patentapplication Ser. No. 13/925,602, filed Jun. 24, 2013, which claimspriority to and the benefit of Korean Patent Application No.10-2012-0071129 and 10-2013-0019948 filed in the Korean IntellectualProperty Office on Jun. 29, 2012 and Feb. 25, 2013, the entire contentsof which are incorporated herein by reference.

BACKGROUND (a) Field

The described technology generally relates to a haptic display device.

(b) Description of the Related Technology

There are several different types of display devices including liquidcrystal displays (LCD), plasma displays, and organic light emittingdiode (OLED) displays.

To improve user interfaces, displays have been combined with other typesof feedback systems. These feedback systems may rely on audio and visualfeedback. A popular trend is to provide feedback through the sense oftouch; this method of feedback is called haptic or tactile feedback.Haptic feedback is felt when human fingertips touch an object; thisincludes tactile feedback that is felt when skin contacts a surface ofan object. One type of haptic feedback is kinesthetic force feedback.Kinesthetic force feedback is felt when movement of joints and musclesare impeded. In order to provide the haptic effect, a haptic actuatorsuch as a vibration component is used. The haptic actuator is generallyembedded in a separate mounting space. Often in mobile devices, theamount of space available for a haptic actuator is limited due tominiaturization of all components in the device. When a haptic actuatoris used with a flexible display, it can make the display difficult tobend.

SUMMARY

One inventive aspect is a haptic display device having advantages ofenabling miniaturization, slimming, and bending. Another aspect is ahaptic display device which includes: a substrate; a plurality of scanlines provided on the substrate to transfer a scan signal; a pluralityof data lines electrically insulated from the scan lines while crossingthe scan lines to transfer a data signal; a plurality of haptic controllines insulated from the scan lines or the data lines to transfer ahaptic signal; a thin film transistor electrically connected to the scanlines and the data lines and provided in a plurality of pixels arrangedin a matrix pattern; a first electrode electrically connected to thethin film transistor; a second electrode facing the first electrode; andan optical adjustment member provided between the first electrode andthe second electrode.

The haptic control line may be provided on a same layer with the firstelectrode.

The haptic control line may be provided parallel with the data line.

A haptic member may be provided at a crossing region between the hapticcontrol line and the scan line.

There can be as many haptic members as there are data lines.Alternatively, there can be fewer haptic members than data lines.

A haptic member may be provided between the haptic control line and thesecond electrode.

The haptic control line may be provided parallel with the scan line, anda haptic member may be provided at a crossing region between the dataline and the haptic control line.

The number of the haptic control lines can equal the number of the scanlines. Alternatively, there can be a smaller number of haptic controllines than scan lines.

A haptic member may be provided between the haptic control line and thesecond electrode.

The haptic control line may be provided on a same layer with the scanline, the haptic control line may be provided parallel with the scanline, and a haptic member may be provided between the haptic controlline and the data line.

A haptic member may be provided between the haptic control line and thefirst electrode, and a haptic member may be provided between the hapticcontrol line and the second electrode.

The haptic control line may be provided on a same layer with the dataline, the haptic control line may be provided parallel with the dataline, and a haptic member may be provided between the scan line and thehaptic control electrode.

A haptic member may be provided between the haptic control line and thefirst electrode, and a haptic member may be provided between the hapticcontrol line and the second electrode.

Further, a haptic display device according to another exemplaryembodiment of the present invention includes: a substrate; a pluralityof scan lines provided on the substrate to transfer a scan signal; aplurality of data lines electrically insulated from the scan lines whilecrossing the scan lines to transfer a data signal; a plurality ofdriving power lines electrically insulated from the scan line whilecrossing the scan line to transfer a driving voltage; a plurality ofhaptic control lines electrically insulated from the scan lines or thedata lines to transfer a haptic signal; a switching thin film transistorelectrically connected to the scan line and the data line; a drivingtransistor electrically connected to the switching thin film transistorand the driving power line; a first electrode electrically connected tothe driving transistor; an organic light emitting diode provided on thefirst electrode; and a second electrode provided on the organic lightemitting diode.

The haptic control line may be provided on a same layer with the firstelectrode, the haptic control line may be provided parallel with thedata line, and a haptic member is provided at a crossing region betweenthe haptic control line and the scan line.

In one embodiment, the haptic control line and the haptic member areformed inside the haptic display device, so that the haptic displaydevice can be miniaturized and slimmed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a layout view illustrating a haptic display device accordingto one embodiment.

FIG. 2 is a cross-sectional view taken along line II-II of FIG. 1.

FIG. 3 is a layout view illustrating a haptic display device accordingto another embodiment.

FIG. 4 is a cross-sectional view taken along line II-II of FIG. 1according to another embodiment.

FIG. 5 is a layout view illustrating a haptic display device accordingto another embodiment.

FIG. 6 is a cross-sectional view of the haptic display device takenalong line VI-VI of FIG. 5.

FIG. 7 is a layout view illustrating a haptic display device accordingto another embodiment.

FIG. 8 is a cross-sectional view taken along line VI-VI of FIG. 5according another embodiment.

FIG. 9 is a layout view illustrating a haptic display device accordingto another embodiment.

FIG. 10 is a cross-sectional view of the haptic display device takenalong line X-X of FIG. 9.

FIG. 11 is a layout view illustrating a haptic display device accordingto another embodiment.

FIG. 12 is a cross-sectional view of the haptic display device takenalong line XII-XII of FIG. 11.

FIG. 13 is a layout view illustrating a haptic display device accordingto another embodiment.

FIG. 14 is a cross-sectional view of the haptic display device takenalong line XIV-XIV of FIG. 13.

FIG. 15 is a layout view illustrating a haptic display device accordingto another embodiment.

FIG. 16 is a cross-sectional view of the haptic display device takenalong line XVI-XVI of FIG. 15.

FIG. 17 is a layout view illustrating a haptic display device accordinganother embodiment.

FIG. 18 is a cross-sectional view of the haptic display device takenalong line XVIII-XVIII of FIG. 17.

FIG. 19 is a layout view illustrating a haptic display device accordingto another embodiment.

FIG. 20 is a cross-sectional view of the haptic display device takenalong line XX-XX of FIG. 19.

FIG. 21 is a layout view illustrating a haptic display device accordingto another embodiment.

FIG. 22 is a cross-sectional view of the haptic display device takenalong line XXII-XXII of FIG. 21.

FIG. 23 is a cross-sectional view of the haptic display device takenalong line XXIII-XXIII of FIG. 21.

FIG. 24 is an equivalent circuit diagram illustrating one pixel of thehaptic display device according to another embodiment.

FIG. 25 is a schematic view illustrating position of a plurality of thinfilm transistors and a capacitor in one pixel of a haptic display deviceaccording to the embodiment of FIG. 24.

FIG. 26 is a layout view illustrating a haptic display device accordingto embodiment of FIG. 24.

FIG. 27 is a cross-sectional view of the haptic display device takenalong line XXVII-XXVII of FIG. 26.

FIG. 28 is a cross-sectional view of the haptic display device takenalong line XXVIII-XXVIII of FIG. 26.

DETAILED DESCRIPTION

FIG. 1 is a layout view illustrating a haptic display device accordingto one exemplary embodiment, and FIG. 2 is a cross-sectional view takenalong line II-II of FIG. 1.

As shown in FIGS. 1 and 2, the haptic display device includes i) asubstrate 110, ii) a plurality of scan lines 121 to transfer a scansignal, iii) a plurality of data lines 171 to transfer a data signal,iv) a plurality of haptic control lines 410 to transfer a haptic signal,v) a thin film transistor 50, vi) a first electrode 190, and vii) asecond electrode 270. The plurality of scan lines 121 are provided onthe substrate 110. The data lines 171 are electrically insulated fromthe scan lines while crossing the scan lines 121. The thin filmtransistor 50 is electrically connected to the scan lines 121 and thedata lines 171. The first electrode 190 is electrically connected to thethin film transistor 50. The second electrode faces the first electrode190.

The substrate 110 may include an insulation substrate made of glass,quartz, a ceramic material, or a plastic material.

The scan lines 121 longitudinally extend in a row direction. A bufferlayer (not shown) is formed between the substrate 110 and the scan lines121 to prevent infiltration of impurity elements, and to planarize asurface of the substrate 110, and the scan lines 121 may be made ofsilicon nitride (SiNx), silicon oxide (SiO₂), or silicon oxinitride(SiOxNy).

An interlayer insulating layer 160 is formed between the scan lines 121and the data lines 171 to insulate the scan lines 121 and the data lines171 from each other. The interlayer insulating layer 160 may be made ofsilicon nitride (SiNx), or silicon oxide (SiO₂).

The data lines 171 longitudinally extend in a column direction verticalto the scan lines 121, and a protective layer 180 is formed on the datalines 171.

The thin film transistors 50 are formed in a plurality of pixelsarranged in a matrix pattern. Each of the thin film transistors 50includes a separate semiconductor layer (not shown), a gate electrodeconnected to the scan lines 121, and a source electrode and a drainelectrode connected to the data lines 171.

The semiconductor layer may include a polysilicon or oxidesemiconductor. The oxide semiconductor may include one of titanium (Ti),hafnium (Hf), zirconium (Zr), aluminum (Al), tantalum (Ta), germanium(Ge), zinc (Zn), gallium (Ga), tin (Sn) or indium (In)-based oxide, zincoxide (ZnO), indium-gallium-zinc oxide (InGaZnO₄), indium-zinc oxide(Zn—In—O), zinc-tin oxide (Zn—Sn—O) indium-gallium oxide (In—Ga—O),indium-tin oxide (In—Sn—O), indium-zirconium oxide (In—Zr—O),indium-zirconium-zinc oxide (In—Zr—Zn—O), indium-zirconium-tin oxide(In—Zr—Sn—O), indium-zirconium-gallium oxide (In—Zr—Ga—O),indium-aluminum oxide (In—Al—O), indium-zinc-aluminum oxide(In—Zn—Al—O), indium-tin-aluminum oxide (In—Sn—Al—O),indium-aluminum-gallium oxide (In—Al—Ga—O), indium-tantalum oxide(In—Ta—O), indium-tantalum-zinc oxide (In—Ta—Zn—O), indium-tantalum-tinoxide (In—Ta—Sn—O), indium-tantalum-gallium oxide (In—Ta—Ga—O),indium-germanium oxide (In—Ge—O), indium-germanium-zinc oxide(In—Ge—Zn—O), indium-germanium-tin oxide (In—Ge—Sn—O),indium-germanium-gallium oxide (In—Ge-Ga—O), titanium-indium-zinc oxide(Ti—In—Zn—O), hafnium-indium-zinc oxide (Hf—In—Zn—O) being a compositeoxide thereof. When the semiconductor layer is made of an oxidesemiconductor, a separate protective layer may be provided to protectthe oxide semiconductor weak against peripheral environments such ashigh temperature.

The first electrode 190 is provided on the protective layer 180. Abarrier rib 350 exposing the first electrode 190 is formed close to theedge of the first electrode 190. An optical adjustment member 300 may beformed between the first electrode 190 and the second electrode 270. Theoptical adjustment member 300 may include a liquid crystal layer or anorganic emission layer.

In some embodiments, the haptic control line 410 is insulated from thescan line 121, is provided on the same layer with the first electrode190, and is substantially parallel with the data line 171.

In some embodiment, a haptic member 510 is formed at the crossing regionbetween the scan line 121 in a row direction and the haptic control line410 in a column direction. The haptic members 510 are provided betweenthe scan line 121 and the haptic control line 410, and the hapticmembers 510 are placed in haptic holes 161 and 181, which are formed inan interlayer insulating layer 160 and protective layer 180 between thescan line 121 and the haptic control line 410, respectively. Since thereis the same number of haptic control lines 410 as there are data lines171, there can be the same number of haptic members 510 as pixels. Thehaptic member 510 may have a size of several μm. This haptic member 510can be formed using an injection printing process of directly droppingand curing the haptic member 510 on the substrate by an injectionprinting device.

In some embodiments, the haptic member 510 includes an Electro ActivePolymer (EAP), a Piezo material, and a material which may physicallyexpand or contract due to a potential difference. For example, thehaptic member 510 includes Polyvinylidene fluoride (PVDF), Polydimethylsiloxane (PDMS), and Polyvinylidene fluoride-co-trifluoroethylene(PVFT).

In some embodiments, the Piezo material used for the haptic member 510includes vivi touch from Bayer Ltd., and VHB 4910 from 3M Ltd. The VHB4910 from 3M Ltd. corresponds to an Acrylic elastomer.

When there is a difference in voltage between the scan line 121 in alower portion of the haptic member 510 and the haptic control line 410in an upper portion of the haptic member 510, the height of the hapticmember 510 is changed by Coulomb force. This is due to polarization ofEAP constituting the haptic member 510, and haptic vibration isgenerated using the change in the height of the haptic member 510.

The haptic control line 410 and the haptic member 510 are inside thedisplay device. Accordingly, since a separate haptic actuator is notrequired, the haptic display device may be miniaturized and slimmed. Thedevice can be used in a flexible display.

Further, since there is the same number of haptic members 510 as thenumber of pixels, the haptic resolution can be improved.

Although a separate haptic control line 410 is shown in this embodiment,the scan line 121 or the data line 171 may be used as the haptic controlline. In this case, a separate reference electrode line may be providedto generate a voltage difference that in turn generates a hapticvibration.

In addition, although there is the same number of haptic control lines410 as the data lines 171 in this embodiment, a smaller number of hapticcontrol lines 410 than the data lines 171 may be provided in a differentembodiment.

FIG. 3 is a layout view illustrating a haptic display device accordingto another embodiment.

As shown in FIG. 3, there are a smaller number of haptic control lines410 than data lines 171. There is one haptic control line 410 for everytwo data lines 171 in this embodiment. There are fewer haptic members inthis embodiment then in the preceding embodiment. Since vibration by thehaptic member 510 is recognized by tactile sensation, the finger cansufficiently recognize the haptic vibration, even if the haptic member510 is smaller than that of the finger and is formed only in some of thepixels.

Meanwhile, although the haptic member 510 is in between the scan line121 and the haptic control line 410 in one embodiment, the haptic member510 may be provided between the haptic control line 410 and the secondelectrode 270 in a different embodiment.

FIG. 4 is a cross-sectional view taken along line II-II compatible withthe embodiment of FIG. 1.

As shown in FIG. 4, a haptic member 510 is provided between a hapticcontrol line 410 and the second electrode 270, and the haptic member 510is filled in a haptic hole 352, which is formed between the hapticcontrol line 410 and the second electrode 270. Since there is the samenumber of haptic control lines 410 as data lines 171, there can be thesame number of haptic members 510 as the number of pixels.

When there is a difference in potential (or voltage) between the scanline 121 and the second electrode 270, because of a haptic signalapplied to the haptic control line 410, the height of the haptic member510 is changed by Coulomb force. This is due to polarization of EAPconstituting the haptic member 510, and haptic vibration is generatedusing the change in the height of the haptic member 510.

The haptic control line can be substantially parallel with the data lineor the scan line.

FIG. 5 is a layout view illustrating a haptic display device accordingto another embodiment and FIG. 6 is a cross-sectional view of the hapticdisplay device taken along line VI-VI of FIG. 5.

As shown in FIGS. 5 and 6, the haptic control line 420 is insulated fromthe data line 171 and is provided on the same layer with the firstelectrode 190 parallel with the scan line 121.

A haptic member 520 is provided at a crossing region between the dataline in a column direction and a haptic control line 420 in the rowdirection. The haptic member 520 is provided between the data line 171and the haptic control line 420, and a haptic member 520 is filled in ahaptic hole 181, which is formed in a protective layer 180 between thedata line 171 and the haptic control line 420. Since there is the samenumber of haptic control lines 420 as scan lines 121, the number ofhaptic members 520 can be the same as the number of pixels.

When there is a difference in potential (or voltage) between the dataline 171 provided at a lower portion of the haptic member 520 and thehaptic control line 420 provided at an upper portion of the hapticmember 520, as a haptic signal is applied to the haptic control line420, the height of the haptic member 520 is changed by Coulomb force,due to polarization of EAP constituting the haptic member 520, andhaptic vibration is generated using the change in the height of thehaptic member 520.

In addition, although there is the same number of haptic control linesas scan lines in this embodiment, there can be a smaller number ofhaptic control lines than the scan lines.

FIG. 7 is a layout view illustrating a haptic display device accordingto another embodiment.

As shown in FIG. 7, there is a smaller number of haptic control lines420 than the scan lines 121. FIG. 7 shows one haptic control line 420for every two scan line. Accordingly, the number of haptic members 520provided at a crossing region between the haptic control line 420 andthe scan line 121 becomes smaller than that of the embodiment shown inFIGS. 5 and 6. Since vibration by the haptic member 520 is recognized bytactile sensation such as a finger, even if the haptic member 520 havingthe size very smaller than that of the finger is formed only in some ofthe pixels, the finger may sufficiently recognize the haptic vibration.

The haptic member 520 may be provided between the haptic control line420 and the second electrode 270 in the present embodiment.

FIG. 8 is a cross-sectional view taken along line VI-VI of FIG. 5.

As shown in FIG. 8, the haptic member 520 is provided between a hapticcontrol line 420 which is provided on the same layer with the firstelectrode 190 and the second electrode 270. The haptic member 510 isfilled in a haptic hole 352, which is formed in a barrier rib 350between the haptic control line 420 and the second electrode 270.

When there is a difference in potential (or voltage) between the hapticcontrol line 420 at a lower portion of the haptic member 520 and thesecond electrode 270 at an upper portion of the haptic member 520 as ahaptic signal is applied to the haptic control line 420, the height ofthe haptic member 520 is changed so that a haptic vibration isgenerated.

Although the haptic control line is on the same layer with the firstelectrode in one embodiment, a haptic control line can be on the samelayer with a scan line in another embodiment.

FIG. 9 is a layout view illustrating a haptic display device accordingto another embodiment and FIG. 10 is a cross-sectional view of thehaptic display device taken along line X-X of FIG. 9.

As shown in FIGS. 9 and 10, the haptic control line 430 is insulatedfrom the data line 171 and is on the same layer with the scan line 121parallel with the scan line 121.

A haptic member 531 is formed at the crossing region between the dataline 171 in a column direction and the haptic control line 430 in a rowdirection. The haptic member 531 is disposed between the data line 171and the haptic control line 430. The haptic member 531 is filled in ahaptic hole 161, which is formed in an interlayer insulating layer 160between a data line 171 and the haptic control line 430. There can bethe same number of the haptic control lines 430 as the scan lines 121 ora smaller number of the haptic control lines 430 than the scan lines121.

When there is a difference in potential between the haptic control line430 at the lower portion of the haptic member 531 and the data line 171at the upper portion of the haptic member 531, as a haptic signal isapplied to the haptic control line 430, the height of the haptic member531 is changed by Coulomb force due to polarization of EAP constitutingthe haptic member 531. A haptic vibration is generated using the changein the height of the haptic member 531.

Although the haptic member is formed between the haptic control line andthe data lined in one embodiment, the haptic member can be formedbetween the haptic control line and the second electrode and between thehaptic control line and the first electrode in different embodiments.

FIG. 11 is a layout view illustrating a haptic display device accordingto another embodiment, FIG. 12 is a cross-sectional view of the hapticdisplay device taken along line XII-XII of FIG. 11,

FIG. 13 is a layout view illustrating a haptic display device accordingto another embodiment, and FIG. 14 is a cross-sectional view of thehaptic display device taken along line XIV-XIV of FIG. 13.

As shown in FIGS. 11 and 12, the haptic control line 430 is insulatedfrom the data line 171 and is provided on the same layer with the scanline 121 parallel with the scan line 121.

A haptic member 532 is provided between the haptic control line 430 andthe second electrode 270. The haptic member 532 is filled in hapticholes 161, 181, and 352, which are formed in an interlayer insulatinglayer 160, a protective layer 180 and a barrier rib 350 between thehaptic control line 430 and the second electrode 270. There can be thesame number of the haptic control lines 430 as the scan lines 121 or asmaller number of the haptic control lines 430 than the scan lines 121.

As shown in FIGS. 13 and 14, a haptic member 533 is provided between thehaptic control line 430 and the first electrode 190, and the hapticmember 533 is filled in haptic holes 161 and 181. The haptic holes 161and 181 are formed in an interlayer insulating layer 160 and aprotective layer 180 between the haptic control line 430 and the firstelectrode 190, respectively. There can be the same number of the hapticcontrol lines 430 as the scan lines 121 or there can be fewer hapticcontrol lines 430 than the scan lines 121.

Although the haptic control line is on the same layer with the firstelectrode in one embodiment, the haptic control line can be formed onthe same layer with the data line in another embodiment.

FIG. 15 is a layout view illustrating a haptic display device accordingto another embodiment and FIG. 16 is a cross-sectional view of thehaptic display device taken along line XVI-XVI of FIG. 15.

As shown in FIGS. 15 and 16, the haptic control line 440 is insulatedfrom the scan line 121 and is on the same layer with the data line 171close to and parallel with the data line 171.

A haptic member 541 is formed at the crossing region between the scanline 121 in a row direction and the haptic control line 440 in a columndirection. The haptic member 541 is formed between the scan line 121 andthe haptic control line 440, and the haptic member 541 is filled in ahaptic hole 161, which is an interlayer insulating layer 160 between thescan line 121 and the haptic control line 440. There can be the samenumber of the haptic control lines 440 as the data lines 171 or asmaller number of the haptic control lines 440 than the data lines 171.

The haptic member is between the scan line and the haptic control linein one embodiment. The haptic member can be disposed between the hapticcontrol line and the second electrode in another embodiment.Alternatively, the haptic member can be disposed between the hapticcontrol line and the first electrode in another embodiment.

FIG. 17 is a layout view illustrating a haptic display device accordinganother embodiment; FIG. 18 is a cross-sectional view of the hapticdisplay device taken along line XVIII-XVIII of FIG. 17.

FIG. 19 is a layout view illustrating a haptic display device accordingto another embodiment, and FIG. 20 is a cross-sectional view of thehaptic display device taken along line XX-XX of FIG. 19.

As shown in FIGS. 17 and 18, the haptic control line 440 can beinsulated from the scan line 121 and is on the same layer with the dataline 171 close to and parallel with the data line 171.

The haptic members 542 are provided between the haptic control line 440and the second electrode 270. The haptic members 542 are filled inhaptic holes 181 and 352, which are formed in a protective layer 180 anda barrier rib 350 between the haptic control line 440 and the secondelectrode 270, respectively. There can be the same number of the hapticcontrol lines 440 as the data lines 171 or a smaller number of thehaptic control lines 440 than the data lines 171.

Further, as shown in FIGS. 19 and 20, the haptic member 543 is formedbetween a haptic control line 440 and the first electrode 190, and thehaptic member 543 is filled in a haptic hole 181, which is formed in aprotective layer 180 between the haptic control line 440 and the firstelectrode 190. There can be the same number of the haptic control lines440 as data lines 171 or a smaller number of the haptic control lines440 than data lines 171.

FIG. 21 is a layout view illustrating a haptic display device accordingto a another embodiment, FIG. 22 is a cross-sectional view of the hapticdisplay device taken along line XXII-XXII of FIG. 21, and FIG. 23 is across-sectional view of the haptic display device taken along lineXXIII-XXIII of FIG. 21.

As shown in FIGS. 21 to 23, the haptic display device includes aswitching thin film transistor 10, a driving thin film transistor 20, astorage device 80, and organic light emitting diode (OLED) 70 that areconnected to each pixel. The haptic display device further includes ascan line 121 disposed in a row direction, a data line 171 and a drivingvoltage line 172 insulated from the scan line 121 while crossing thescan line 121. One pixel can be located between the interposing scanline 121, the data line 171, and the driving voltage, but is not limitedthereto.

The organic light emitting diode 70 includes a first electrode 190, anorganic emission layer 720 formed on the first electrode 190, and asecond electrode 270 formed on the organic emission layer 720. The firstelectrode 190 is an anode (+) serving as a hole injection electrode, andthe second electrode 270 is a cathode (−) serving as an electroninjection electrode. That is, the first electrode 190 can be thecathode, and the second electrode 270 can be the anode according to onedriving method. In another embodiment, the anode and cathode electrodescan be reversed. Holes and electrons from the first electrode 190 andthe second electrode 270 are injected into the organic emission layer720, respectively. Light emission is achieved when an exciton includinginjected holes and electrons is changed from an exited state to a groundstate.

The organic emission layer 720 is made of a low molecular organicmaterial or a high molecular organic material such as Poly3,4-ethylenedioxythiophene (PEDOT). Further, the organic emission layer720 may be formed in a multilayer including at least one of an emissionlayer, a hole injection layer (HIL), a hole transport layer (HTL), anelectron transport layer (ETL), and an electron injection layer (EIL).When the organic emission layer 720 includes all the above layers, thehole injection layer (HIL) is disposed on the first electrode 190serving as an anode, and the hole transport layer (HTL), the emissionlayer, the electron transport layer (ETL), and electron injection layer(EIL) are sequentially laminated on the hole injection layer (HIL).

The organic emission layer 720 may include a red organic emission layeremitting red light, a green organic emission layer emitting green light,and a blue organic emission layer emitting blue light. The red organicemission layer, the green organic emission layer, and the blue organicemission layer are formed in a red pixel, a green pixel, and a bluepixel, respectively, so that a color image is implemented.

In addition, in the organic emission layer 720, the red organic emissionlayer, the green organic emission layer, and the blue organic emissionlayer are simultaneously laminated in the red pixel, the green pixel,and the blue pixel, a red filter, a green filter, and a blue filter areprovided by pixels to create a color display device. As another example,the white organic emission layers emitting the white light are formed inthe red pixel, the green pixel, and the blue pixel, respectively, a redfilter, a green filter, and a blue filter are formed in the pixels tomake a color display device. When forming the color display using thewhite organic emission layer and the color filter, a deposition mask isnot necessary to be used for deposit the red organic emission layer, thegreen organic emission layer, and the blue organic emission layer toeach individual pixel, that is, the red pixel, the green pixel, and theblue pixel.

The white organic emission layer, illustrated as another example, can beformed in an organic emission layer, and can include a configuration toemit white light by stacking a plurality of organic emission layers. Forexample, the white organic emission layer includes a configuration toemit white light by a combination of at least one yellow organicemission layer and at least one blue organic emission layer, aconfiguration to emit white light by a combination of at least one cyanorganic emission layer and at least one red organic emission layer, anda configuration to emit white light by a combination of at least onemagenta organic emission layer and at least one green organic emissionlayer.

The storage device 80 includes a first storage plate 128 and a secondstorage plate 178 disposed while being interposed an interlayerinsulating layer 160 therebetween. The interlayer insulating layer 160becomes a dielectric material. Storage capacitance is determined by anelectric charge charged in the storage device 80 and a voltage betweenboth storage plates 128 and 178.

The switching thin film transistor 10 includes a switching semiconductorlayer 131 b, a switching gate electrode 122, a switching sourceelectrode 173, and a switching drain electrode 175, and a driving thinfilm transistor 20 includes a driving semiconductor layer 131 a, adriving gate electrode 125, a driving source electrode 176, and adriving drain electrode 177.

The switching thin film transistor 10 is used as a switch selecting apixel emitting light. The switching gate electrode 122 is connected to ascan line 121. The switching source electrode 173 is connected to a dataline 171. The switching drain electrode 175 is spaced apart from aswitching source electrode 173 and is connected to the first storageplate 128.

The driving thin film transistor 20 applies driving power for emittingan organic emission layer 720 of an OLED 70 in a selected pixel to thefirst electrode 190. The driving gate electrode 125 is connected to thefirst storage plate 128. The driving source electrode 176 and the secondstorage plate 178 are connected to a driving voltage line 172,respectively. The driving drain electrode 177 is connected to the firstelectrode 190 of the OLED 70 through an electrode contact hole 182.

By this arrangement, the switching thin film transistor 10 operatesaccording to a gate voltage applied to the scan line 121 to transfer adata voltage applied to the data line 171 to the driving thin filmtransistor 20. A voltage corresponding to a difference between a commonvoltage applied to the driving thin film transistor 20 from the drivingvoltage line 172 and a data voltage from the switching thin filmtransistor 10 is stored in the storage device 80, and a currentcorresponding to the voltage stored in the storage device 80 flows tothe OLED 70 through the driving thin film transistor 20 so that the OLED70 emits light.

The haptic control line 410 serves to transfer a haptic signal, isinsulated from the scan line 121, and is on the same layer with thefirst electrode 190 parallel with the data line 171.

A haptic member 510 is formed at the crossing region between the scanline 121 in a row direction and the haptic control line 410 in a columndirection.

FIGS. 22 and 23 show a structure of a driving thin film transistor. Theyalso show a switching and a driving thin film transistor.

In the haptic display device according to one embodiment, a buffer layer120 is formed on a substrate 110. The buffer layer 120 functions toprevent infiltration of impurity elements and to planarize a surface ofthe substrate 110, and may be made of various materials capable ofperforming the function. For example, the buffer layer 120 may use oneof a silicon nitride (SiNx) layer, a silicon oxide (SiO₂) layer, or asilicon oxinitride (SiOxNy) layer.

A driving semiconductor layer 131 a is formed on a buffer layer 120. Thedriving semiconductor layer 131 a includes a polysilicon layer. Further,the driving semiconductor layer 131 a includes a channel region 135,which is not doped with impurities, and a source region 136 and a drainregion 137 channel formed aside the channel region 135 which are p+doped. The impurities are changed according to a type of the thin filmtransistor.

In one embodiment, a thin film transistor of a PMOS structure where a Ptype impurity is used in the driving thin film transistor 20. Otherembodiments can have other configurations. Accordingly, both of thinfilm transistors of an NMOS structure or a CMOS structure can be used asthe driving thin film transistor 20.

Further, although the driving thin film transistor 20 shown in FIG. 22is a multi-layered thin film transistor including a multi-polysiliconlayer, a switching thin film transistor 10 not shown in FIG. 22 caninclude a multi-layered thin film transistor or an amorphous thin filmtransistor with an amorphous silicon layer.

A gate insulating layer 140 made of silicon nitride (SiNx) or siliconoxide (SiO₂) is formed on the driving semiconductor layer 131 a. A gatewire including a gate electrode 125 is provided on a driving gateinsulating layer 140. Further, the gate wire further includes a scanline 121, a first storage plate 128, and other wires. Moreover, thedriving gate electrode 125 overlaps with at least a part of the drivingsemiconductor layer 131 a, particularly, with a channel region 135.

An interlayer insulating layer 160 covering the gate electrode 125 isformed on the gate insulating layer 140. The gate insulating layer 140and the interlayer insulating layer 160 include through-holes exposing asource region 136 and a drain region 137 of the semiconductor layer 131a in common. The interlayer insulating layer 160 is made of aceramic-based material such as silicon nitride (SiNx) or silicon oxide(SiO₂) as in the gate insulating layer 140.

A data wire including a driving source electrode 176 and a driving drainelectrode 177 is on the interlayer insulating layer 160. Moreover, thedata wire further includes a data line 171, a driving voltage line 172,a second storage plate 178, and other wires. In addition, the drivingsource electrode 176 and the driving drain electrode 177 are connectedto a source region 136 and a drain region 137 of the semiconductor layer131 a through through-holes, which are formed in the interlayerinsulating layer 160 and the gate insulating layer 140, respectively.

In this manner, a driving thin film transistor 20 including the drivingsemiconductor layer 131 a, the driving gate electrode 125, the drivingsource electrode 176, and the driving drain electrode 177 is prepared. Aconfiguration of the driving thin film transistor 20 is not limited tothe above examples, but may be modified to a known configuration invarious different ways so that those skilled in the art to which theinvention pertains can easily realize.

A protective layer 180 covering data wires 172, 176, 177, and 178 isformed on the interlayer insulating layer 160. The protective layer 180serves to remove step difference and to planarize an OLED 70 to be onthe protective layer 180 in order to improve luminous efficiency of theOLED 70. Further, the protective layer 180 includes a contact hole 182exposing a part of the drain electrode 177.

The protective layer 180 may be made of one material of acryl-basedresin (polyacrylates resin), epoxy resin, phenolic resin), polyamidesresin, polyimides rein, unsaturated polyesters resin, polyphenylenethers resin, poly phenylenesulfides resin, and benzocyclobutene(BCB).

In addition, the exemplary embodiment according to the present inventionis not limited to the foregoing structure, but one of the protectivelayer 180 and the interlayer insulating layer 160 may be omitted.

The haptic members 510 are disposed between the scan line 121 and thehaptic control line 410, and the haptic members 510 are filled in hapticholes 161 and 181 which are formed in the interlayer insulating layer160 and the protective layer 180 between the scan line 121 and thehaptic control line 410, respectively. Since there is the same number ofhaptic control lines 410 as the data lines 171, the same number ofhaptic members 510 can be formed as pixels.

When there is a difference in potential between the scan line 121 at alower portion of the haptic member 510 and the haptic control line 410at an upper portion of the haptic member 510, the height of the hapticmember 510 is changed by Coulomb force. This is due to polarization ofEAP constituting the haptic member 510, and haptic vibration isgenerated using the change in the height of the haptic member 510.

In this manner, the haptic control line 410 and the haptic member 510are formed inside the display device. Accordingly, since a separatehaptic actuator is not required, the haptic display device may beminiaturized and slimmed, and can be used in a flexible display device.

In addition, there can be the same number of haptic members 510 aspixels.

A first electrode 190 of the organic light emitting diode OLED 70 isformed on the protective layer 180. A plurality of the first electrode190 are provided for every pixel. In this case, the plurality of thefirst electrode 190 are spaced apart from each other. The firstelectrode 190 is connected to a drain electrode 177 through a contacthole 182 of the protective layer 180.

Further, a barrier rib 350 having an opening exposing the firstelectrode 190 is formed on the protective layer 180. That is, thebarrier rib 350 includes a plurality of openings formed for each pixel.In addition, the first electrode 190 is disposed corresponding to anopening of the barrier rib 350. However, the first electrode 190 is notalways at an opening of the barrier rib 350, but may be disposed belowthe barrier rib 350 so that the first electrode 190 partially overlapswith the barrier rib 350. The barrier rib 350 may be made ofpolyacryl-based resin (polyacrylates resin) and polyimide-based resin ora silica-based-inorganic material.

The organic emission layer 720 is formed on the first electrode 190, andthe second electrode 270 is provided on the organic emission layer 720.In this manner, the organic light emitting diode OLED 70 including thefirst electrode 190, the organic emission layer 720, and the secondelectrode 270 is prepared.

The organic emission layer 720 is made of a low molecular organicmaterial or a polymeric organic material. Further, the organic emissionlayer 720 may be formed in a multilayer including at least one of anemission layer, a hole injection layer (HIL), a hole transport layer(HTL), an electron transport layer (ETL), and an electron injectionlayer (EIL). When the organic emission layer 720 includes all the abovelayers, the hole injection layer (HIL) is disposed on the firstelectrode 190 serving as an anode, and the hole transport layer (HTL),the emission layer, the electron transport layer (ETL), and electroninjection layer (EIL) are sequentially laminated on the hole injectionlayer (HIL).

In addition, the organic emission layer 720 is disposed in only theopening of the barrier rib 350 in FIG. 22. Accordingly, the organicemission layer 720 may be formed not only on the first electrode 190,but also between the barrier rib 350 and the second electrode 270, inthe opening of the barrier rib 350. In detail, the organic emissionlayer 720 may further include a plurality of layers such as the holeinjection layer (HIL), the hole transport layer (HTL), the electrontransport layer (ETL), and the electron injection layer (EIL) togetherwith the emission layer. In this case, the hole injection layer (HIL),the hole transport layer (HTL), the electron transport layer (ETL), andthe electron injection layer (EIL) except for the emission layer may beformed on the barrier rib 350 as well as the first electrode 190 likethe second electrode 270 using an open mask during a manufacturingprocedure. That is, at least one of the plurality of layers included inthe organic emission layer 720 may be disposed between the barrier rib350 and the second electrode 270.

The first electrode 190 and the second electrode 270 can be made of atransparent conductive material, a transflective or reflectiveconductive material. The OLED 70 may be a top-emitting OLED, abottom-emitting OLED or a double side-emitting OLED according to typesof materials forming the first electrode 190 and the second electrode270.

A transparent conductive material may use a material such as Indium TinOxide (ITO), Indium Zinc Oxide (IZO), zinc oxide (ZnO) or Indium Oxide(In₂O₃). A reflective material and a transflective material may use amaterial such as lithium (Li), calcium (Ca), lithium fluoride/calcium(LiF/Ca), lithium fluoride/aluminum (LiF/Al), aluminum (Al), silver(Ag), magnesium (Mg), or gold (Au).

A sealing member 210 is arranged on the second electrode 270 opposite toa display substrate 110. The sealing member 210 may be made of atransparent material such as glass and a plastic material, or may beformed in a thin film encapsulation layer including a plurality of thinfilms. The thin film encapsulation layer may be formed by alternatelystacking at least one organic layer and at least one inorganic layer.

The organic layer is made of a polymer. It is preferable that theorganic layer may be a single layer or a laminated layer that is made ofone of polyethyleneterephthalate, polyimide, polycarbonate, epoxy,polyethylene and polyacrylate. It is more preferably that the organiclayer may be made of polyacrylate. In detail, the polyacrylate includesa polymerized monomer composition having diacrylate based-monomer and atriacrylate based-monomer. The monomer composition may further include amonoacrylate-based monomer. In addition, the monomer composition mayfurther include a known photoinitiator such as TPO, but is not limitedthereto.

The inorganic layer may be a single layer or a laminated layer includingmetal oxide or metal nitride. In detail, the inorganic layer may includeone of SiNx, Al₂O₃, SiO₂, and TiO₂. An externally exposed top layeramong the thin film encapsulation layers may include an inorganic layerto prevent permeation with respect to the OLED.

Further, the thin film encapsulation layer may include at least onesandwich structure where at least one organic layer is sandwichedbetween at least two inorganic layers. Moreover, the thin filmencapsulation layer may include at least one sandwich structure where atleast one inorganic layer is sandwiched between at least two organiclayers.

In addition, the thin film encapsulation layer may include a firstinorganic layer, a first organic layer, and a second inorganic layer,which are sequentially formed from the OLED. Furthermore, the thin filmencapsulation layer may include the first inorganic layer, the firstorganic layer, the second inorganic layer, a second organic layer, and athird inorganic layer which are sequentially formed from the OLED. Thethin film encapsulation layer may include the first inorganic layer, thefirst organic layer, the second inorganic layer, the second organiclayer, the third inorganic layer, a third organic layer, and a fourthinorganic layer which are sequentially formed from the OLED.

A metal halide layer including LiF can be formed in between the OLED andthe first inorganic layer. When the first inorganic layer is formedthrough a sputtering scheme or a plasma deposition scheme, the metalhalide layer can prevent the OLED from being damaged.

An area of the first organic layer can be smaller than that of thesecond inorganic layer, and an area of the second organic layer can besmaller than that of the third inorganic layer. Further, the firstorganic layer may be perfectly covered with the second inorganic layer,and the second organic layer may be perfectly covered with the thirdinorganic layer.

Although one embodiment of the display device has a 2Tr 1cap structure,another embodiment of the display device has a 6Tr 2cap structure.

FIG. 24 is an equivalent circuit diagram illustrating one pixel of thehaptic display device according to another embodiment.

As shown in FIG. 24, one pixel of a haptic display device includes aplurality of signal lines 121, 122, 123, 124, 171, and 172, a pluralityof thin film transistor T1, T2, T3, T4, T5, and T6 connected to thesignal lines 121, 122, 123, 124, 171, and 172, capacitors Cst and Cb,and an organic light emitting diode (OLED).

Thin film transistor includes a driving thin film transistor T1, aswitching thin film transistor T2, a compensation thin film transistorT3, an initialization thin film transistor T4, a first light emissioncontrol thin film transistor T5, and a second light emission controlthin film transistor T6. The capacitors Cst and Cb a storage capacitorCst and a boosting capacitor Cb.

A signal line includes a scan line 121 transferring a signal Sn, aprevious scan line 122 transferring a previous scan signal Sn−1 to theinitialization thin film transistor T4, a light emission control line123 transferring a light emission control signal En to the first lightemission control thin film transistor T5 and the second light emissioncontrol thin film transistor T6, a data line 171 crossing the scan line121 and transferring a data signal Dm, a driving voltage line 172transferring a driving voltage ELVDD and being substantially parallelwith the data line 171, and a voltage line 124 transferring aninitialization voltage Vint for initializing the driving thin filmtransistor T1.

A gate electrode of the switching thin film transistor T2 is connectedto the scan line 121, a source electrode of the switching thin filmtransistor T2 is connected to the data line 171, a drain electrode ofthe switching thin film transistor T2 is electrically connected to asource electrode of the driving thin film transistor T1 and the drivingvoltage line 172. The switching thin film transistor T2 performs aswitching operation according to the scan signal received through thescan line 121.

The driving thin film transistor T1 receives the data signal accordingto the switching operation of the switching thin film transistor T2 tosupply a driving current to the organic light emitting diode OLED.

A gate electrode of the thin film transistor T1 is connected oneterminal of the storage capacitor Cst, and another terminal of thestorage capacitor Cst is connected to the driving voltage line 172.Further, the scan line 121 connected to the gate electrode of theswitching thin film transistor T2 is connected to one terminal of theboosting capacitor Cb, and another terminal of the boosting capacitor Cbis connected to the gate electrode of the driving thin film transistorT1.

A drain electrode of the driving thin film transistor T1 is electricallyconnected to an anode of the organic light emitting diode OLED.Moreover, a cathode of the organic light emitting diode OLED isconnected to a common voltage ELVSS. Accordingly, the organic lightemitting diode OLED receives the driving current from the driving thinfilm transistor T1 to emit light so that an image is displayed.

Hereinafter, a structure of one pixel of the haptic display device shownin FIG. 24 will be described in detail with reference to FIGS. 25 to 28in cooperation with FIG. 24.

FIG. 25 is a schematic view illustration positions of a plurality ofthin film transistors and a capacitor in one pixel of a haptic displaydevice according to one embodiment, FIG. 26 is a layout viewillustrating a haptic display device of FIG. 25, FIG. 27 is across-sectional view of the haptic display device taken along lineXXVII-XXVII of FIG. 26, and FIG. 28 is a cross-sectional view of thehaptic display device taken along line XXVIII-XXVIII of FIG. 26.

As shown in FIGS. 25 to 28, a pixel of the haptic display deviceincludes a scan line 121, a previous scan line 122, a light emissioncontrol line 123, and an initialization voltage line 124 applying a scansignal Sn, a previous signal Sn−1, a light emission control signal Enand an initialization voltage Vint, respectively, and being formed in arow direction, a data line 171 and a driving voltage line 172 crossingthe scan line 121, the previous scan line 122, the light emissioncontrol line 123 and the initialization voltage line 124 and applying adata signal Dm and a driving voltage ELVDD to the pixel, respectively.Further, the pixel of the haptic display includes a previous scan line122, a light emission control line 123, and an initialization voltageline 124, and a haptic control line 410 crossing the scan line 121, theprevious scan line 122, the light emission control line 123, and theinitialization voltage line 124 and transferring a haptic signal H tothe pixel.

In addition, the pixel includes a driving thin film transistor T1, aswitching thin film transistor T2, a compensation thin film transistorT3, an initialization thin film transistor T4, a first light emissioncontrol thin film transistor T5, a second light emission control thinfilm transistor T6, a storage capacitor Cst, a boosting capacitor Cb,and an organic light emitting diode (OLED) 70.

The driving thin film transistor T1 includes a driving semiconductorlayer 131 a, a driving gate electrode 125 a, a driving source electrode176 a, and a diving drain electrode 177 a. The driving source electrode176 a corresponding to a driving source region of the drivingsemiconductor layer 131 a, and the driving drain electrode 177 acorresponds to a driving drain region of the driving semiconductor layer131 a.

The switching thin film transistor T2 includes a switching semiconductorlayer 131 b, a switching gate electrode 125 b, a switching sourceelectrode 176 b, and a switching drain electrode 177 b.

The compensation thin film transistor T3 includes a compensationsemiconductor layer 131 c, a compensation gate electrode 125 c, acompensation source electrode 176 c, and a compensation drain electrode177 c. The thin film transistor T4 includes an initializationsemiconductor layer 131 d, an initialization gate electrode 125 d, aninitialization source electrode 176 d, and an initialization drainelectrode 177 d.

The first light emission control thin film transistor T5 includes afirst light emission control semiconductor layer 131 e, a first lightemission control gate electrode 125 e, a first light emission controlsource electrode 176 e, and a first light emission control drainelectrode 177 e. The second light emission control thin film transistorT6 includes a second light emission control semiconductor layer 131 f, asecond light emission control gate electrode 125 f, a second lightemission control source electrode 176 f and a second light emissioncontrol drain electrode 177 f.

The storage capacitor Cst includes a first storage plate 132 and asecond storage plate 127 disposed while being interposed a gateinsulating layer 140 therebetween. The gate insulating layer 140 becomesa dielectric material. Storage capacitance is determined by an electriccharge charged in the capacitor Cst and a voltage between both storageplates 132 and 127.

The first storage plate 132 is formed on the same layer with the drivingsemiconductor layer 131 a, the switching semiconductor layer 131 b, thecompensation semiconductor layer 131 c, the first light emission controlsemiconductor layer 131 e, and the second light emission controlsemiconductor layer 131 f. The second storage plate 127 is on the samelayer with the scan line 121 and the previous scan line 122.

The driving semiconductor layer 131 a of the driving thin filmtransistor T1 connects the switching semiconductor layer 131 b and thecompensation semiconductor layer 131 c to the first light emissioncontrol semiconductor layer 131 e and the second light emission controlsemiconductor layer 131 f.

Accordingly, the driving source electrode 176 a is connected to theswitching drain electrode 177 b and the first light emission controldrain electrode 177 e, and the drain electrode 177 a is connected to thecompensation drain electrode 177 c and the second light emission controlsource electrode 176 f.

The first storage plate 132 of the storage capacitor Cst is connected tothe compensation source electrode 176 c and the initialization drainelectrode 177 d, and is connected to a driving gate electrode 125 athrough a connection member 174. In this case, the connection member 174is formed on the same layer with the data line 171. The connectionmember 174 is connected to the first storage plate 132 through a contacthole 166, which is formed in the interlayer insulating layer 160 and thegate insulating layer 140, and is connected to the driving gateelectrode 125 a through the contact hole 167, which is formed in theinterlayer insulating layer 160.

The second storage plate 129 of the storage capacitor Cst is connectedto the driving voltage line 172 and is formed approximately parallelwith the scan line 121.

The first boosting storage plate 133 of the boosting capacitor Cb is anextension portion which extends from the first storage plate 132, andthe second boosting storage plate 129 is a protruding portion whichprotrudes upward and downward of the scan line 121.

The first boosting storage plate 133 has a hammer shape, and the firstboosting storage plate 133 includes a handle portion 133 a parallel withthe driving voltage line 172 and a head portion 133 b formed at an endof the handle portion 133 a.

The protruding portion of the second boosting storage plate 129 overlapsan inside of the head portion 133 b of the first boosting storage plate133. Accordingly, an area of the first boosting storage plate 133 of theboosting capacitor Cb is larger than an area of the second boostingstorage plate 129.

Meanwhile, the switching thin film transistor T2 is used as a switchselecting a pixel emitting light. The switching gate electrode 125 b isconnected to the scan line 121. The switching source electrode 176 b isconnected to the data line 171. The switching drain electrode 177 b isconnected to the driving thin film transistor T1 and the first lightemission control thin film transistor T5.

A second light emission control drain electrode 177 f of the secondlight emission control thin film transistor T6 is directly connected toa pixel electrode 190 of the organic light emitting diode (OLED) 70through a contact hole 182 of the protective layer 180.

In this case, a structure of the thin film transistor will be describedbased on the second light emission control thin film transistor T6.Further, remaining thin film transistors T1, T2, T3, T4, and T5 isalmost the same as a stack structure of the second light emissioncontrol thin film transistor T6 and thus the detailed descriptionthereof is omitted.

A buffer layer 120 is formed on the substrate 110, and the second lightemission control semiconductor layer 131 f and the first boostingstorage plate 133 constituting a boosting capacitor Cb are formed on thebuffer layer 120. The substrate 110 may include an insulation substratemade of glass, quartz, a ceramic material, or a plastic material. Thesecond light emission control semiconductor layer 131 f and the firstboosting storage plate 133 are formed in a polysilicon layer. Further,the driving semiconductor layer 131 a includes a channel region 135,which is not doped with impurities, and a source region 136 and a drainregion 137 channel formed aside the channel region 135 which are p+doped. The impurity may be changed according to a type of the thin filmtransistor.

A gate insulating layer 140 made of silicon nitride (SiNx) or siliconoxide (SiO₂) is formed on the second light emission controlsemiconductor layer 131 f.

A gate wire gate including a scan line 121 having a switching gateelectrode 125 b and a compensation gate electrode 125 c, a previous scanline 122 having an initialization gate electrode 125 d, and a lightemission control line 123 having a driving gate electrode 125 a and asecond light emission control gate electrode 125 f is on the insulatinglayer 140. Moreover, the second light emission control gate electrode125 f overlaps with at least a part of the second light emission controlsemiconductor layer 131 f, particularly, with a channel region 135. Thegate wire further includes a second storage plate 127 constituting thestorage capacitor Cst, and the second boosting storage plate 129constituting a boosting capacitor Cb.

The second storage plate 127 is connected to the driving voltage line172 through a contact hole 168, and the second boosting storage plate129 is connected to the scan line 121.

An interlayer insulating layer 160 covering the second light emissioncontrol gate electrode 125 e is formed on the gate insulating layer 140.Both of the gate insulating layer 140 and the interlayer insulatinglayer 160 include a contact hole 163 exposing a drain region of thesecond light emission control semiconductor layer 131 f. The interlayerinsulating layer 160 is made of a ceramic-based material such as siliconnitride (SiNx) or silicon oxide (SiO₂) as in the gate insulating layer140.

A data wire including a data line 171 having a switching sourceelectrode 176 b, a connection member 174, and the second light emissioncontrol drain electrode 177 f, and driving voltage line 172 is on theinterlayer insulating layer 160.

Further, the switching source electrode 176 b and the second lightemission control drain electrode 177 f are connected to a source regionof the switching semiconductor layer 131 b and a drain region of thesecond light emission control semiconductor layer 131 f through contactholes 162 and 163 which are formed in the interlayer insulating layer160 and the gate insulating layer 140, respectively.

A protective layer 180 covering data wires 171, 174, 177 f, and 172 isformed on the interlayer insulating layer 160, and a pixel electrode 190and a haptic control line 410 are formed on the protective layer 180. Apixel electrode 190 is connected to the second light emission controldrain electrode 177 f through a contact hole 182, which is formed in theprotective layer 180.

The haptic member 510 is formed between the scan line 121 and the hapticcontrol line 410, and the haptic members 510 are filled in haptic holes161 and 181 which are formed in the interlayer insulating layer 160 andthe protective layer 180 between the scan line 121 and the hapticcontrol line 410. Since there is the same number of haptic control lines410 as the data lines 171, there can be the same number of hapticmembers 510 as pixels.

When there is a difference in voltage between the scan line 121 at alower portion of the haptic member 510 and the haptic control line 410at an upper portion of the haptic member 510, the height of the hapticmember 510 is changed by Coulomb force due to polarization of EAPconstituting the haptic member 510. This causes haptic vibration bychanging the height of the haptic member 510.

In this manner, the haptic control line 410 and the haptic member 510are formed inside the display device. Accordingly, since a separatehaptic actuator is not required, the haptic display device can beminiaturized and slimmed, and can be used in a flexible display device.

A barrier rib 350 is formed at an edge of the pixel electrode 190 and onthe protective layer 180, and the barrier rib 350 has a barrier ribopening 351 exposing the pixel electrode 190. The barrier rib 350 can bemade of polyacryl-based resin (polyacrylates resin) and polyimide-basedresin or a silica-based-inorganic material.

An organic emission layer 720 is formed on the pixel electrode 190exposed through the barrier rib opening 351, and a common electrode 270is formed on the organic emission layer 720. In this manner, the organiclight emitting diode (OLED) 70 including the pixel electrode 190, theorganic emission layer 720, and the common electrode 270 is prepared.

The pixel electrode 190 is an anode serving as a hole injectionelectrode, and the common electrode 270 is a cathode serving as anelectron injection electrode. That is, the pixel electrode 190 maybecome the cathode, and the common electrode 270 may become the anodeaccording to a driving method. Holes and electrons from the firstelectrode 190 and the second electrode 270 are injected into the organicemission layer 720, respectively. Light emission is achieved when anexciton including injected holes and electrons is changed from an exitedstate to a ground state.

The organic emission layer 720 is made of a low molecular organicmaterial or a polymeric organic material such as Poly3,4-ethylenedioxythiophene (PEDOT). Further, the organic emission layer720 may be formed in a multilayer including at least one of an emissionlayer, a hole injection layer (HIL), a hole transport layer (HTL), anelectron transport layer (ETL), and an electron injection layer (EIL).When the organic emission layer 720 includes all the above layers, thehole injection layer (HIL) is disposed on the first electrode 190serving as an anode, and the hole transport layer (HTL), the emissionlayer, the electron transport layer (ETL), and electron injection layer(EIL) are sequentially laminated on the hole injection layer (HIL).Since the common electrode 270 is made of a reflective conductivematerial, a bottom-light emitting organic light emitting diode (OLED)display is provided. A reflective material may use a material such aslithium (Li), calcium (Ca), lithium fluoride/calcium (LiF/Ca), lithiumfluoride/aluminum (LiF/Al), aluminum (Al), silver (Ag), magnesium (Mg),or gold (Au).

According to at least one of the disclosed embodiments, the hapticcontrol line and the haptic member are formed inside the haptic displaydevice, so that the haptic display device can be miniaturized andslimmed. In addition, since a separate haptic actuator is not required,at least one of the disclosed embodiments is applicable to a flexibledisplay device. Further, since the same number of haptic members is usedas the number of pixels, a resolution of a haptic display device isimproved.

While the above embodiments have been described in connection with theaccompanying drawings, it is to be understood that the invention is notlimited to the disclosed embodiments, but, on the contrary, is intendedto cover various modifications and equivalent arrangements includedwithin the spirit and scope of the appended claims.

What is claimed is:
 1. A haptic display device comprising: a substrate;a plurality of scan lines disposed over the substrate and configured totransfer a scan signal; a plurality of data lines spaced apart from thescan lines and configured to transfer a data signal, wherein the datalines cross the scan lines; a plurality of driving power lines spacedapart from the scan lines and configured to transfer a driving voltage,wherein the driving power lines cross the scan lines; a plurality ofhaptic control lines spaced apart from the scan lines or the data linesand configured to transfer a haptic signal; a plurality of hapticmembers configured to change a height thereof based at least in part onthe haptic signal; a thin film transistor electrically connected to atleast one of the scan lines and the corresponding data line, wherein thethin film transistor is formed in each of a plurality of pixels arrangedin a matrix pattern; a first electrode electrically connected to thethin film transistor; a second electrode facing the first electrode; anoptical adjustment member disposed between the first and secondelectrodes; an insulating layer formed between the haptic control linesand the scan line; and a barrier rib covering an edge of the firstelectrode and disposed on the insulating layer, wherein the plurality ofhaptic members overlap the barrier rib, wherein the insulating layer isa protective layer covering the data lines, wherein each of the hapticcontrol lines is provided on a same layer with the first electrode andis separated from the first electrode.
 2. The haptic display device ofclaim 1, wherein the haptic control lines are substantially parallelwith the data lines.
 3. The haptic display device of claim 2, whereineach of the plurality of haptic members is disposed at a crossing regionbetween each of the haptic control lines and the corresponding scanline.
 4. The haptic display device of claim 3, wherein the number of thehaptic members is the same as the number of the data lines.
 5. Thehaptic display device of claim 3, wherein the number of the hapticmembers is less than the number of the data lines.
 6. The haptic displaydevice of claim 3, wherein the number of the haptic control lines is thesame as the number of the data lines.
 7. The haptic display device ofclaim 3, wherein the number of the haptic control lines is less than thenumber of the data lines.
 8. The haptic display device of claim 2,wherein each of the plurality of haptic members is disposed between eachof the haptic control lines and the second electrode.
 9. A hapticdisplay device comprising: a substrate; a plurality of scan linesdisposed over the substrate and configured to transfer a scan signal; aplurality of data lines spaced apart from the scan lines and configuredto transfer a data signal, wherein the data lines cross the scan lines;a plurality of haptic control lines spaced apart from the scan lines orthe data lines and configured to transfer a haptic signal; a thin filmtransistor electrically connected to a selected one of the scan linesand the corresponding data line, wherein the thin film transistor isformed in each of a plurality of pixels arranged in a matrix pattern; afirst electrode electrically connected to the thin film transistor; asecond electrode facing the first electrode; an optical adjustmentmember disposed between the first and second electrodes, wherein thesubstrate is formed below the haptic control lines and at least one ofthe scan lines; a plurality of haptic members each of which is formedbetween a haptic control line of the plurality of haptic control linesand the corresponding data line; and a barrier rib covering an edge ofthe first electrode, wherein the plurality of haptic members overlap thebarrier rib, wherein the insulating layer is disposed on the same layeras the haptic members, wherein each of the haptic control lines isprovided on a same layer with the scan line and is separated from thescan line.
 10. A haptic display device comprising: a substrate; aplurality of scan lines disposed over the substrate and configured totransfer a scan signal; a plurality of data lines spaced apart from thescan lines and configured to transfer a data signal, wherein the datalines cross the scan lines; a plurality of haptic control lines spacedapart from the scan lines or the data lines and configured to transfer ahaptic signal; a thin film transistor electrically connected to aselected one of the scan lines and the corresponding data line, whereinthe thin film transistor is formed in each of a plurality of pixelsarranged in a matrix pattern; a first electrode electrically connectedto the thin film transistor; a second electrode facing the firstelectrode; an optical adjustment member disposed between the first andsecond electrodes; and a barrier rib covering an edge of the firstelectrode, wherein the substrate is formed below the haptic controllines and at least one of the scan lines, wherein each of the hapticcontrol lines is provided on a same layer with the scan line and isseparated from the scan line, wherein the haptic control line isprovided parallel with the scan line, wherein a haptic member isprovided between the haptic control line and the first electrode, andwherein the plurality of haptic members overlap the barrier rib.
 11. Ahaptic display device comprising: a substrate; a plurality of scan linesdisposed over the substrate and configured to transfer a scan signal; aplurality of data lines spaced apart from the scan lines and configuredto transfer a data signal, wherein the data lines cross the scan lines;a plurality of haptic control lines spaced apart from the scan lines orthe data lines and configured to transfer a haptic signal; a thin filmtransistor electrically connected to a selected one of the scan linesand the corresponding data line, wherein the thin film transistor isformed in each of a plurality of pixels arranged in a matrix pattern; afirst electrode electrically connected to the thin film transistor; asecond electrode facing the first electrode; an optical adjustmentmember disposed between the first and second electrodes; and a barrierrib covering an edge of the first electrode, wherein the substrate isformed below the haptic control lines and at least one of the scanlines, wherein each of the haptic control lines is provided on a samelayer with the scan line and is separated from the scan line, whereinthe haptic control line is provided parallel with the scan line, whereina haptic member is provided between the haptic control line and thesecond electrode, and wherein the plurality of haptic members overlapthe barrier rib.
 12. A haptic display device comprising: a substrate; aplurality of scan lines disposed over the substrate and configured totransfer a scan signal; a plurality of data lines spaced apart from thescan lines and configured to transfer a data signal, wherein the datalines cross the scan lines; a plurality of haptic control lines spacedapart from the scan lines or the data lines and configured to transfer ahaptic signal; a plurality of haptic members configured to change aheight thereof based at least in part on the haptic signal; a thin filmtransistor electrically connected to at least one of the scan lines andthe corresponding data line, wherein the thin film transistor is formedin each of a plurality of pixels arranged in a matrix pattern; a firstelectrode electrically connected to the thin film transistor; a secondelectrode facing the first electrode; an optical adjustment memberdisposed between the first and second electrodes; an insulating layerformed between the haptic control lines and the substrate; and a barrierrib covering an edge of the first electrode, wherein the insulatinglayer is an interlayer insulating layer covering and directly contactingthe scan lines, wherein each of the haptic control lines is provided ona same layer with the data line and is separated from the data line,wherein each haptic member is disposed between the first electrode and aselected one of the data lines in a plan view, and wherein the pluralityof haptic members overlap the barrier rib.
 13. The haptic display deviceof claim 12, wherein the haptic control line is provided parallel withthe data line.
 14. The haptic display device of claim 13, wherein eachof the plurality of haptic members is disposed between the respectivescan line and the respective haptic control line.
 15. A haptic displaydevice comprising: a substrate; a plurality of scan lines disposed overthe substrate and configured to transfer a scan signal; a plurality ofdata lines spaced apart from the scan lines and configured to transfer adata signal, wherein the data lines cross the scan lines; a plurality ofdriving power lines spaced apart from the scan lines and configured totransfer a driving voltage, wherein the driving power lines cross thescan lines; a plurality of control lines spaced apart from the scanlines or the data lines and configured to transfer a signal; a pluralityof piezo members configured to change a height thereof based at least inpart on the signal; a switching thin film transistor electricallyconnected to at least one of the scan lines and the corresponding dataline; a driving transistor electrically connected to the switching thinfilm transistor and a selected one of the driving power lines; a firstelectrode electrically connected to the driving transistor; an organiclight emitting diode disposed on the first electrode; a second electrodedisposed on the organic light emitting diode; an insulating layer formedbetween the control lines and the substrate; and a barrier rib coveringan edge of the first electrode and disposed on the insulating layer,wherein the plurality of haptic members overlap the barrier rib, whereinthe insulating layer is a protective layer covering the data lines,wherein each of the control lines is provided on a same layer with thefirst electrode and is separated from the first electrode.
 16. Thehaptic display device of claim 15, wherein the control lines aresubstantially parallel with the data lines.
 17. The haptic displaydevice of claim 16, wherein each of the plurality of haptic members isdisposed at a crossing region between each of the control lines and thecorresponding scan line.